Show Hamamatsu Avalanche Photo Diode 0816008477
This is all the information about APD 0816008477. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0816008477 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1415016232/0816008477 |
| Unit: |
#3828 (barcode 1309039296) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F13 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
390.7 V |
| Dark current: |
4.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
297 |
| Position in Box: |
26 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10363 |
| |
|
| Shipment: |
|
| Grid number: |
61 |
| Position in grid: |
13 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
390.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 390.7987956 V T = -25 °C: 354.8167965 V |
| Voltage for Gain 150: |
T = +20 °C: 398.6753602 V T = -25 °C: 362.3568005 V |
| Voltage for Gain 200: |
T = +20 °C: 403.0352642 V T = -25 °C: 366.5832242 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.660133893 V-1 T = -25 °C: 4.884441961 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.263277934 V-1 T = -25 °C: 8.972774676 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.4627044 V-1 T = -25 °C: 15.80990396 V-1 |
| Break-through voltage: |
T = +20 °C: 418.2720016 V T = -25 °C: 382.2403806 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
