Show Hamamatsu Avalanche Photo Diode 0816008450
This is all the information about APD 0816008450. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0816008450 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D10 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
384.1 V |
| Dark current: |
3.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
298 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10364 |
| |
|
| Shipment: |
|
| Grid number: |
65 |
| Position in grid: |
5 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
384.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.5376141 V T = -25 °C: 349.5059748 V |
| Voltage for Gain 150: |
T = +20 °C: 392.5003852 V T = -25 °C: 356.9525189 V |
| Voltage for Gain 200: |
T = +20 °C: 396.9168616 V T = -25 °C: 361.1600484 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.372905113 V-1 T = -25 °C: 5.245269243 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.458083555 V-1 T = -25 °C: 9.525530241 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.51198736 V-1 T = -25 °C: 9.632123661 V-1 |
| Break-through voltage: |
T = +20 °C: 413.2106202 V T = -25 °C: 376.3967432 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
