Show Hamamatsu Avalanche Photo Diode 0816008406
This is all the information about APD 0816008406. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0816008406 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0816008406/2905032797 |
| Unit: |
#2449 (barcode 1309027668) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F07 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383.2 V |
| Dark current: |
2.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
311 |
| Position in Box: |
1 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10385 |
| |
|
| Shipment: |
|
| Grid number: |
63 |
| Position in grid: |
5 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
383.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.0561791 V T = -25 °C: 347.3603729 V |
| Voltage for Gain 150: |
T = +20 °C: 390.9747886 V T = -25 °C: 354.7650697 V |
| Voltage for Gain 200: |
T = +20 °C: 395.3855582 V T = -25 °C: 358.918892 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.563336303 V-1 T = -25 °C: 4.786553058 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.92980316 V-1 T = -25 °C: 9.681745165 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.81168825 V-1 T = -25 °C: 15.30964627 V-1 |
| Break-through voltage: |
T = +20 °C: 410.8920903 V T = -25 °C: 374.4059896 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
