Show Hamamatsu Avalanche Photo Diode 0815008369
This is all the information about APD 0815008369. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0815008369 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E04 |
| Break-through voltage: |
404 V |
| Voltage for Gain 100 (T=+25°C): |
375.3 V |
| Dark current: |
2.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
362 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10554 |
| |
|
| Shipment: |
|
| Grid number: |
70 |
| Position in grid: |
19 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
375.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 375.0542194 V T = -25 °C: 340.2006611 V |
| Voltage for Gain 150: |
T = +20 °C: 382.9404154 V T = -25 °C: 347.478043 V |
| Voltage for Gain 200: |
T = +20 °C: 387.3359844 V T = -25 °C: 351.572843 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.578064796 V-1 T = -25 °C: 4.917763492 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.020677534 V-1 T = -25 °C: 9.210578409 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.97146311 V-1 T = -25 °C: 16.42813836 V-1 |
| Break-through voltage: |
T = +20 °C: 403.2763299 V T = -25 °C: 367.227072 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
