Show Hamamatsu Avalanche Photo Diode 0815008362
This is all the information about APD 0815008362. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0815008362 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E01 |
Break-through voltage: |
400 V |
Voltage for Gain 100 (T=+25°C): |
373.1 V |
Dark current: |
3.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
299 |
Position in Box: |
17 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10366 |
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Shipment: |
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Grid number: |
70 |
Position in grid: |
11 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
10. Aug 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
09. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
373.1 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 373.3928939 V T = -25 °C: 339.107438 V |
Voltage for Gain 150: |
T = +20 °C: 381.2694042 V T = -25 °C: 346.54802 V |
Voltage for Gain 200: |
T = +20 °C: 385.6659149 V T = -25 °C: 350.761623 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.476792568 V-1 T = -25 °C: 4.931818121 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.714609516 V-1 T = -25 °C: 8.851818831 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.15327489 V-1 T = -25 °C: 15.50443958 V-1 |
Break-through voltage: |
T = +20 °C: 398.2243514 V T = -25 °C: 364.4069946 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history