Show Hamamatsu Avalanche Photo Diode 0815008354
This is all the information about APD 0815008354. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0815008354 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D05 |
| Break-through voltage: |
402 V |
| Voltage for Gain 100 (T=+25°C): |
373.6 V |
| Dark current: |
4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
299 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10365 |
| |
|
| Shipment: |
|
| Grid number: |
70 |
| Position in grid: |
14 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
373.6 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 373.7966339 V T = -25 °C: 339.2728205 V |
| Voltage for Gain 150: |
T = +20 °C: 381.6211492 V T = -25 °C: 346.4698927 V |
| Voltage for Gain 200: |
T = +20 °C: 385.9823971 V T = -25 °C: 350.5122672 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.702408764 V-1 T = -25 °C: 4.946751055 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.285452681 V-1 T = -25 °C: 9.235372099 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.47199648 V-1 T = -25 °C: 16.5541367 V-1 |
| Break-through voltage: |
T = +20 °C: 401.9425521 V T = -25 °C: 365.8059344 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
