RUB » Physics » The Faculty » Chairs and Working Groups » EP1 » PANDA FEMC Production Database

Show Hamamatsu Avalanche Photo Diode 4710045328 - Archived data from Fri, 18. June 2021 11:09:41 CEST


This is all the information about APD 4710045328. If it is wrong, edit the data.

Subdetector specification:  
Serial: 4710045328
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: In transit from Hamamatsu to Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E04
Break-through voltage: 408 V
Voltage for Gain 100 (T=+25°C): 379.4 V
Dark current: 5.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 504
Position in Box: 26
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
22. Sep 2021 15:19:07 CEST oafedulidis Updated APD batch assignment via API.
27. Jul 2021 16:16:57 CEST oafedulidis Updated APD location via API.
27. Jul 2021 16:16:39 CEST oafedulidis Updated box and position via API.
18. Jun 2021 11:09:41 CEST Tobias Imported from Hamamatsu datasheet.