Show Hamamatsu Avalanche Photo Diode 0814008290
This is all the information about APD 0814008290. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0814008290 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
424 V |
| Voltage for Gain 100 (T=+25°C): |
395.9 V |
| Dark current: |
3.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
363 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10555 |
| |
|
| Shipment: |
|
| Grid number: |
69 |
| Position in grid: |
5 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
395.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 396.9084632 V T = -25 °C: 360.3768671 V |
| Voltage for Gain 150: |
T = +20 °C: 404.7946212 V T = -25 °C: 368.0811881 V |
| Voltage for Gain 200: |
T = +20 °C: 409.1616132 V T = -25 °C: 372.3956366 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.592303797 V-1 T = -25 °C: 4.564151643 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.128632209 V-1 T = -25 °C: 9.032457386 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.25166045 V-1 T = -25 °C: 14.02122816 V-1 |
| Break-through voltage: |
T = +20 °C: 424.2463944 V T = -25 °C: 387.9051248 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
