Show Hamamatsu Avalanche Photo Diode 0814008270
This is all the information about APD 0814008270. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0814008270 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A09 |
Break-through voltage: |
424 V |
Voltage for Gain 100 (T=+25°C): |
395.8 V |
Dark current: |
3.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
298 |
Position in Box: |
34 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10365 |
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Shipment: |
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Grid number: |
68 |
Position in grid: |
15 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
17. Aug 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
09. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
395.8 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 396.0853077 V T = -25 °C: 359.7122794 V |
Voltage for Gain 150: |
T = +20 °C: 403.9926284 V T = -25 °C: 367.3656332 V |
Voltage for Gain 200: |
T = +20 °C: 408.3766905 V T = -25 °C: 371.6591772 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.556489422 V-1 T = -25 °C: 4.520878487 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.060901517 V-1 T = -25 °C: 8.94210719 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.1409261 V-1 T = -25 °C: 15.81462399 V-1 |
Break-through voltage: |
T = +20 °C: 424.0239538 V T = -25 °C: 387.6306497 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history