Show Hamamatsu Avalanche Photo Diode 0701005618
This is all the information about APD 0701005618. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
0701005618 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
E10 |
Break-through voltage: |
419 V |
Voltage for Gain 100 (T=+25°C): |
390.7 V |
Dark current: |
14 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
416 |
Position in Box: |
6 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10649 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 390.345469 V T = -25 °C: 354.604815 V |
Voltage for Gain 150: |
T = +20 °C: 398.278452 V T = -25 °C: 362.0778387 V |
Voltage for Gain 200: |
T = +20 °C: 402.6790655 V T = -25 °C: 366.2798227 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.449405795 V-1 T = -25 °C: 4.649758554 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.641812403 V-1 T = -25 °C: 9.318811523 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.05845219 V-1 T = -25 °C: 14.56507075 V-1 |
Break-through voltage: |
T = +20 °C: 408.6836374 V T = -25 °C: 381.8670126 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history