Show Hamamatsu Avalanche Photo Diode 0813008223
This is all the information about APD 0813008223. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0813008223 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E12 |
Break-through voltage: |
420 V |
Voltage for Gain 100 (T=+25°C): |
391.9 V |
Dark current: |
8.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
199 |
Position in Box: |
46 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10161 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 392.3760125 V T = -25 °C: 356.0436372 V |
Voltage for Gain 150: |
T = +20 °C: 400.2475614 V T = -25 °C: 363.4256114 V |
Voltage for Gain 200: |
T = +20 °C: 404.5989477 V T = -25 °C: 367.676899 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.415519962 V-1 T = -25 °C: 4.26196866 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.623357526 V-1 T = -25 °C: 9.434858244 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.95956481 V-1 T = -25 °C: 14.78368163 V-1 |
Break-through voltage: |
T = +20 °C: 421.5679631 V T = -25 °C: 383.1127398 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history