Show Hamamatsu Avalanche Photo Diode 0813008205
This is all the information about APD 0813008205. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0813008205 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C05 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385.1 V |
| Dark current: |
4.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
199 |
| Position in Box: |
31 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10160 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.2897212 V T = -25 °C: 349.1611477 V |
| Voltage for Gain 150: |
T = +20 °C: 393.1790787 V T = -25 °C: 356.6459519 V |
| Voltage for Gain 200: |
T = +20 °C: 397.5635086 V T = -25 °C: 360.8390822 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.485118207 V-1 T = -25 °C: 4.817789619 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.835713944 V-1 T = -25 °C: 9.750061939 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.42811064 V-1 T = -25 °C: 15.40736912 V-1 |
| Break-through voltage: |
T = +20 °C: 413.4411556 V T = -25 °C: 376.7506602 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
