Show Hamamatsu Avalanche Photo Diode 0812008150
This is all the information about APD 0812008150. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0812008150 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1709019061/0812008150 |
| Unit: |
#3240 (barcode 1309035779) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E13 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
391.2 V |
| Dark current: |
5.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
192 |
| Position in Box: |
41 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10150 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 391.8398647 V T = -25 °C: 355.2754731 V |
| Voltage for Gain 150: |
T = +20 °C: 399.7183962 V T = -25 °C: 362.8835123 V |
| Voltage for Gain 200: |
T = +20 °C: 404.1102267 V T = -25 °C: 367.1641676 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.567755389 V-1 T = -25 °C: 4.617040777 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.979671365 V-1 T = -25 °C: 9.049336427 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.83472065 V-1 T = -25 °C: 15.84938805 V-1 |
| Break-through voltage: |
T = +20 °C: 419.4075691 V T = -25 °C: 382.7084002 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
