Show Hamamatsu Avalanche Photo Diode 0812008145
This is all the information about APD 0812008145. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0812008145 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G13 |
Break-through voltage: |
421 V |
Voltage for Gain 100 (T=+25°C): |
392.4 V |
Dark current: |
3.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
192 |
Position in Box: |
37 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10150 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 392.8642736 V T = -25 °C: 356.3215651 V |
Voltage for Gain 150: |
T = +20 °C: 400.7642726 V T = -25 °C: 363.9931228 V |
Voltage for Gain 200: |
T = +20 °C: 405.1668719 V T = -25 °C: 368.3145698 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.568949854 V-1 T = -25 °C: 4.601931874 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.986531524 V-1 T = -25 °C: 8.980835274 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.83913086 V-1 T = -25 °C: 15.60842265 V-1 |
Break-through voltage: |
T = +20 °C: 420.1775437 V T = -25 °C: 384.0054181 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history