Show Hamamatsu Avalanche Photo Diode 0812008137
This is all the information about APD 0812008137. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0812008137 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F15 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
391.6 V |
| Dark current: |
4.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
294 |
| Position in Box: |
25 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10358 |
| |
|
| Shipment: |
|
| Grid number: |
110 |
| Position in grid: |
9 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
23. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
391.6 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 391.7103848 V T = -25 °C: 355.1661996 V |
| Voltage for Gain 150: |
T = +20 °C: 399.6814564 V T = -25 °C: 362.9228923 V |
| Voltage for Gain 200: |
T = +20 °C: 404.1004692 V T = -25 °C: 367.1814205 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.624144911 V-1 T = -25 °C: 5.40585954 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.095342977 V-1 T = -25 °C: 9.745521592 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.09473275 V-1 T = -25 °C: 14.2542387 V-1 |
| Break-through voltage: |
T = +20 °C: 416.6285873 V T = -25 °C: 382.0459708 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
