Show Hamamatsu Avalanche Photo Diode 0812008134
This is all the information about APD 0812008134. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0812008134 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 1606017160/0812008134 |
Unit: |
#2583 (barcode 1309025237) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
red |
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Manufacturer information: |
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Wafer position: |
D10 |
Break-through voltage: |
413 V |
Voltage for Gain 100 (T=+25°C): |
384.6 V |
Dark current: |
6.6 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
294 |
Position in Box: |
22 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10357 |
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Shipment: |
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Grid number: |
110 |
Position in grid: |
3 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
23. Aug 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
10. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
384.6 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 385.3216325 V T = -25 °C: 349.5754285 V |
Voltage for Gain 150: |
T = +20 °C: 393.2246022 V T = -25 °C: 357.0010487 V |
Voltage for Gain 200: |
T = +20 °C: 397.6072593 V T = -25 °C: 361.1748689 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.451880307 V-1 T = -25 °C: 4.666425025 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.708182766 V-1 T = -25 °C: 9.383915348 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.17484744 V-1 T = -25 °C: 14.77096727 V-1 |
Break-through voltage: |
T = +20 °C: 412.9048414 V T = -25 °C: 376.3393396 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history