Show Hamamatsu Avalanche Photo Diode 0812008126
This is all the information about APD 0812008126. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0812008126 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2513028549/0812008126 |
| Unit: |
#2627 (barcode 1309029617) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C11 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
388.7 V |
| Dark current: |
4.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
294 |
| Position in Box: |
18 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10357 |
| |
|
| Shipment: |
|
| Grid number: |
110 |
| Position in grid: |
8 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
23. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
388.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.3961975 V T = -25 °C: 353.2160056 V |
| Voltage for Gain 150: |
T = +20 °C: 397.2566532 V T = -25 °C: 360.753697 V |
| Voltage for Gain 200: |
T = +20 °C: 401.6175936 V T = -25 °C: 364.9698844 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.447158209 V-1 T = -25 °C: 4.759191333 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.767723099 V-1 T = -25 °C: 9.521670006 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.30048837 V-1 T = -25 °C: 15.00430414 V-1 |
| Break-through voltage: |
T = +20 °C: 416.5399352 V T = -25 °C: 380.2330091 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
