Show Hamamatsu Avalanche Photo Diode 0812008125
This is all the information about APD 0812008125. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0812008125 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0812008125/3008033709 |
| Unit: |
#3835 (barcode 1309039364) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F12 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
390.9 V |
| Dark current: |
4.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
294 |
| Position in Box: |
17 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10357 |
| |
|
| Shipment: |
|
| Grid number: |
110 |
| Position in grid: |
6 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
23. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
390.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 391.0478134 V T = -25 °C: 354.8405637 V |
| Voltage for Gain 150: |
T = +20 °C: 398.8978869 V T = -25 °C: 362.4288035 V |
| Voltage for Gain 200: |
T = +20 °C: 403.2588505 V T = -25 °C: 366.6729241 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.578784219 V-1 T = -25 °C: 4.829981694 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.063605491 V-1 T = -25 °C: 8.856147343 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.10389227 V-1 T = -25 °C: 15.46203448 V-1 |
| Break-through voltage: |
T = +20 °C: 418.1376979 V T = -25 °C: 381.9726014 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
