Show Hamamatsu Avalanche Photo Diode 0812008121
This is all the information about APD 0812008121. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0812008121 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0812008121/2305024575 |
| Unit: |
#2904 (barcode 1309034369) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E11 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.2 V |
| Dark current: |
7.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
294 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10357 |
| |
|
| Shipment: |
|
| Grid number: |
110 |
| Position in grid: |
0 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
23. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
387.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.6682065 V T = -25 °C: 351.5226048 V |
| Voltage for Gain 150: |
T = +20 °C: 395.5205728 V T = -25 °C: 358.9929905 V |
| Voltage for Gain 200: |
T = +20 °C: 399.8665201 V T = -25 °C: 363.1941805 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.685144841 V-1 T = -25 °C: 4.660015853 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.308681395 V-1 T = -25 °C: 9.269465023 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.58440338 V-1 T = -25 °C: 14.50892847 V-1 |
| Break-through voltage: |
T = +20 °C: 415.1562894 V T = -25 °C: 378.5291189 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
