Show Hamamatsu Avalanche Photo Diode 0812008116
This is all the information about APD 0812008116. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0812008116 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0908009541/0812008116 |
| Unit: |
#3315 (barcode 1309028177) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D11 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.3 V |
| Dark current: |
5.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
294 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10357 |
| |
|
| Shipment: |
|
| Grid number: |
109 |
| Position in grid: |
11 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
387.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.2023913 V T = -25 °C: 351.984226 V |
| Voltage for Gain 150: |
T = +20 °C: 396.074429 V T = -25 °C: 359.4683945 V |
| Voltage for Gain 200: |
T = +20 °C: 400.4487334 V T = -25 °C: 363.6506854 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.519840764 V-1 T = -25 °C: 4.8755565 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.868456785 V-1 T = -25 °C: 8.928425051 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.61888014 V-1 T = -25 °C: 15.7526927 V-1 |
| Break-through voltage: |
T = +20 °C: 415.2767974 V T = -25 °C: 378.6169089 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
