Show Hamamatsu Avalanche Photo Diode 0812008112
This is all the information about APD 0812008112. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0812008112 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389 V |
| Dark current: |
3.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
363 |
| Position in Box: |
1 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10555 |
| |
|
| Shipment: |
|
| Grid number: |
109 |
| Position in grid: |
3 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
389 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.1247504 V T = -25 °C: 353.0716422 V |
| Voltage for Gain 150: |
T = +20 °C: 397.053387 V T = -25 °C: 360.6550515 V |
| Voltage for Gain 200: |
T = +20 °C: 401.4639141 V T = -25 °C: 364.9112411 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.496582274 V-1 T = -25 °C: 4.756527232 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.871977076 V-1 T = -25 °C: 9.538686247 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.43212339 V-1 T = -25 °C: 15.04760416 V-1 |
| Break-through voltage: |
T = +20 °C: 414.123969 V T = -25 °C: 381.0854901 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
