Show Hamamatsu Avalanche Photo Diode 0812008102
This is all the information about APD 0812008102. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0812008102 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2003021675/0812008102 |
Unit: |
#2661 (barcode 1309028672) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
red |
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Manufacturer information: |
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Wafer position: |
D02 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
380.3 V |
Dark current: |
4 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
294 |
Position in Box: |
2 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10357 |
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Shipment: |
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Grid number: |
109 |
Position in grid: |
4 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
17. Aug 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
10. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
380.3 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 380.4518894 V T = -25 °C: 344.8900122 V |
Voltage for Gain 150: |
T = +20 °C: 388.3333694 V T = -25 °C: 352.2631959 V |
Voltage for Gain 200: |
T = +20 °C: 392.7101497 V T = -25 °C: 356.4216229 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.421174415 V-1 T = -25 °C: 4.967289659 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.654772123 V-1 T = -25 °C: 9.229053497 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.96428686 V-1 T = -25 °C: 16.44601087 V-1 |
Break-through voltage: |
T = +20 °C: 408.4260778 V T = -25 °C: 372.0079826 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history