Show Hamamatsu Avalanche Photo Diode 0812008083
This is all the information about APD 0812008083. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0812008083 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2302024302/0812008083 |
Unit: |
#3504 (barcode 1309037018) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
red |
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Manufacturer information: |
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Wafer position: |
G05 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
383.8 V |
Dark current: |
2.6 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
196 |
Position in Box: |
20 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10156 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 383.1980386 V T = -25 °C: 348.0107125 V |
Voltage for Gain 150: |
T = +20 °C: 391.0660501 V T = -25 °C: 355.4160172 V |
Voltage for Gain 200: |
T = +20 °C: 395.432489 V T = -25 °C: 359.5642351 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.489395775 V-1 T = -25 °C: 4.808356951 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.742475401 V-1 T = -25 °C: 9.406023037 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.98644387 V-1 T = -25 °C: 15.82874481 V-1 |
Break-through voltage: |
T = +20 °C: 411.1923583 V T = -25 °C: 375.0766443 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history