Show Hamamatsu Avalanche Photo Diode 0812008079
This is all the information about APD 0812008079. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0812008079 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E06 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.2 V |
| Dark current: |
7.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
196 |
| Position in Box: |
16 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10156 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.2956201 V T = -25 °C: 343.3936752 V |
| Voltage for Gain 150: |
T = +20 °C: 386.1690364 V T = -25 °C: 350.6836538 V |
| Voltage for Gain 200: |
T = +20 °C: 390.5670104 V T = -25 °C: 354.7832818 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.476952676 V-1 T = -25 °C: 4.78665213 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.627989052 V-1 T = -25 °C: 9.748633774 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.81560282 V-1 T = -25 °C: 15.40479094 V-1 |
| Break-through voltage: |
T = +20 °C: 405.772104 V T = -25 °C: 369.6836413 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
