Show Hamamatsu Avalanche Photo Diode 4108040916 - Archived data from Wed, 12. May 2021 12:58:07 CEST
This is all the information about APD 4108040916. If it is wrong, edit the data.
Subdetector specification: | |
---|---|
Serial: | 4108040916 |
Type: | Hamamatsu Avalanche Photo Diode |
Detector: | unassigned |
Unit: | unassigned |
Preamp: | 0 |
Current location: | Bochum |
Installation information: | |
Label: | none |
Manufacturer information: | |
Wafer position: | B12 |
Break-through voltage: | 419 V |
Voltage for Gain 100 (T=+25°C): | 390.3 V |
Dark current: | 12.5 nA |
Screening Logistics: | |
Available: | Yes |
Storage Box: | 453 |
Position in Box: | 40 |
EP1 batch: | 251 |
EP1 batch after irradiation: | none |
Shipment: | |
Grid number: | none |
Position in grid: | none |
Arrival for irradiation: | none |
Sent for analysis after irradiation: | none |
Return for assembly: | none |
Irradiation: | |
Date: | none |
Dose used: | none |
Temperature: | none |
Position: | none |
Bias voltage: | none |
Annealing: | |
Date: | none |
Temperature: | none |
Duration: | none |
Measurement results: | |
Voltage for Gain 100: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 150: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 200: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 100: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 150: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 200: | T = +20 °C: none T = -25 °C: none |
Break-through voltage: | T = +20 °C: none T = -25 °C: none |
Notes: |
Version history
Time | Author | Change comment |
---|---|---|
13. Dec 2021 14:39:46 CET | oafedulidis | Updated APD batch assignment via API. |
12. May 2021 12:58:07 CEST | oafedulidis | Updated APD batch assignment via API. |
21. Apr 2021 15:38:32 CEST | oafedulidis | Updated APD location via API. |
21. Apr 2021 15:38:19 CEST | oafedulidis | Updated box and position via API. |
13. Apr 2021 13:47:22 CEST | Tobias | Imported from Hamamatsu datasheet. |