Show Hamamatsu Avalanche Photo Diode 0811008022
This is all the information about APD 0811008022. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0811008022 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F03 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
391.5 V |
| Dark current: |
3.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
199 |
| Position in Box: |
7 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10159 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 391.8499311 V T = -25 °C: 355.5709454 V |
| Voltage for Gain 150: |
T = +20 °C: 399.7797521 V T = -25 °C: 363.1969295 V |
| Voltage for Gain 200: |
T = +20 °C: 404.1838429 V T = -25 °C: 367.4877395 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.608608172 V-1 T = -25 °C: 4.578799299 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.050773335 V-1 T = -25 °C: 8.907443386 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.97919245 V-1 T = -25 °C: 15.58313358 V-1 |
| Break-through voltage: |
T = +20 °C: 420.0781125 V T = -25 °C: 383.4528535 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
