Show Hamamatsu Avalanche Photo Diode 4101040432 - Archived data from Wed, 28. April 2021 14:03:49 CEST
This is all the information about APD 4101040432. If it is wrong, edit the data.
Subdetector specification: | |
---|---|
Serial: | 4101040432 |
Type: | Hamamatsu Avalanche Photo Diode |
Detector: | unassigned |
Unit: | unassigned |
Preamp: | 0 |
Current location: | Bochum |
Installation information: | |
Label: | none |
Manufacturer information: | |
Wafer position: | F12 |
Break-through voltage: | 437 V |
Voltage for Gain 100 (T=+25°C): | 407.9 V |
Dark current: | 9.7 nA |
Screening Logistics: | |
Available: | Yes |
Storage Box: | 446 |
Position in Box: | 16 |
EP1 batch: | 239 |
EP1 batch after irradiation: | none |
Shipment: | |
Grid number: | none |
Position in grid: | none |
Arrival for irradiation: | none |
Sent for analysis after irradiation: | none |
Return for assembly: | none |
Irradiation: | |
Date: | none |
Dose used: | none |
Temperature: | none |
Position: | none |
Bias voltage: | none |
Annealing: | |
Date: | none |
Temperature: | none |
Duration: | none |
Measurement results: | |
Voltage for Gain 100: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 150: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 200: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 100: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 150: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 200: | T = +20 °C: none T = -25 °C: none |
Break-through voltage: | T = +20 °C: none T = -25 °C: none |
Notes: |
Version history
Time | Author | Change comment |
---|---|---|
01. Dec 2021 15:24:03 CET | oafedulidis | Updated APD batch assignment via API. |
28. Apr 2021 14:03:49 CEST | oafedulidis | Updated APD batch assignment via API. |
19. Apr 2021 15:19:16 CEST | oafedulidis | Updated APD location via API. |
19. Apr 2021 15:19:03 CEST | oafedulidis | Updated box and position via API. |
31. Mar 2021 14:39:06 CEST | Tobias | Imported from Hamamatsu datasheet. |