Show Hamamatsu Avalanche Photo Diode 0810007986
This is all the information about APD 0810007986. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0810007986 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0810007986/0811008025 |
| Unit: |
#3806 (barcode 1309037476) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C13 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
388.7 V |
| Dark current: |
3.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
296 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10361 |
| |
|
| Shipment: |
|
| Grid number: |
103 |
| Position in grid: |
15 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
23. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
388.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.2537523 V T = -25 °C: 352.9664733 V |
| Voltage for Gain 150: |
T = +20 °C: 397.1562039 V T = -25 °C: 360.5347807 V |
| Voltage for Gain 200: |
T = +20 °C: 401.5480001 V T = -25 °C: 364.7650788 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.466754277 V-1 T = -25 °C: 4.804376654 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.751164298 V-1 T = -25 °C: 9.709690323 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.27493894 V-1 T = -25 °C: 15.23743767 V-1 |
| Break-through voltage: |
T = +20 °C: 416.9846324 V T = -25 °C: 380.5079821 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
