Show Hamamatsu Avalanche Photo Diode 0810007970
This is all the information about APD 0810007970. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0810007970 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D13 |
Break-through voltage: |
417 V |
Voltage for Gain 100 (T=+25°C): |
388.2 V |
Dark current: |
4.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
296 |
Position in Box: |
14 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10361 |
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Shipment: |
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Grid number: |
103 |
Position in grid: |
6 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
23. Aug 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
10. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
388.2 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 388.5257832 V T = -25 °C: 352.2899584 V |
Voltage for Gain 150: |
T = +20 °C: 396.4135869 V T = -25 °C: 359.7837481 V |
Voltage for Gain 200: |
T = +20 °C: 400.7834339 V T = -25 °C: 363.9787902 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.418960735 V-1 T = -25 °C: 4.747818765 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.628928983 V-1 T = -25 °C: 9.578429962 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.98123444 V-1 T = -25 °C: 15.09968729 V-1 |
Break-through voltage: |
T = +20 °C: 416.2353195 V T = -25 °C: 379.5039891 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history