Show Hamamatsu Avalanche Photo Diode 0810007951
This is all the information about APD 0810007951. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0810007951 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2305024521/0810007951 |
| Unit: |
#3823 (barcode 1309039487) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F11 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
387.2 V |
| Dark current: |
3.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
296 |
| Position in Box: |
4 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10360 |
| |
|
| Shipment: |
|
| Grid number: |
102 |
| Position in grid: |
10 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
23. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
387.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.2520407 V T = -25 °C: 351.2210857 V |
| Voltage for Gain 150: |
T = +20 °C: 395.1014816 V T = -25 °C: 358.6962346 V |
| Voltage for Gain 200: |
T = +20 °C: 399.453867 V T = -25 °C: 362.8723665 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.4929632 V-1 T = -25 °C: 4.769064386 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.89215783 V-1 T = -25 °C: 9.625027797 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.69176249 V-1 T = -25 °C: 15.33048778 V-1 |
| Break-through voltage: |
T = +20 °C: 413.6759453 V T = -25 °C: 377.7103597 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
