Show Hamamatsu Avalanche Photo Diode 0611004868
This is all the information about APD 0611004868. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0611004868 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F03 |
Break-through voltage: |
450 V |
Voltage for Gain 100 (T=+25°C): |
421.9 V |
Dark current: |
11.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
205 |
Position in Box: |
42 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10236 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 422.0504729 V T = -25 °C: 385.1333569 V |
Voltage for Gain 150: |
T = +20 °C: 429.9229389 V T = -25 °C: 392.9547947 V |
Voltage for Gain 200: |
T = +20 °C: 434.2998933 V T = -25 °C: 397.3103292 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.561143937 V-1 T = -25 °C: 4.55724298 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.962507765 V-1 T = -25 °C: 9.012901948 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.91786577 V-1 T = -25 °C: 13.92946096 V-1 |
Break-through voltage: |
T = +20 °C: 439.964119 V T = -25 °C: 413.024475 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history