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Show Hamamatsu Avalanche Photo Diode 0613005007


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Subdetector specification:  
Serial: 0613005007
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: In transit to Mainz
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: F05
Break-through voltage: 450 V
Voltage for Gain 100 (T=+25°C): 421.9 V
Dark current: 16.4 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 342
Position in Box: 45
EP1 batch: none
EP1 batch after irradiation: 10518
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 427.0054057 V     T = -25 °C: 390.1384597 V
Voltage for Gain 150: T = +20 °C: 434.8429109 V     T = -25 °C: 397.9399196 V
Voltage for Gain 200: T = +20 °C: 439.1866964 V     T = -25 °C: 402.2787387 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.55482225 V-1     T = -25 °C: 4.548724338 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 9.062324502 V-1     T = -25 °C: 8.989946753 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.13212202 V-1     T = -25 °C: 14.0005308 V-1
Break-through voltage: T = +20 °C: 439.9618532 V     T = -25 °C: 414.9629859 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 21:59:46 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:32:10 CET jreher Updated box and position via API.
07. Oct 2020 15:45:53 CEST jreher Updated APD location via API.
17. Aug 2020 14:53:50 CEST vwerner Updated APD batch assignment via API.
11. Aug 2020 17:54:10 CEST jreher Updated APD location via API.
18. Jun 2019 10:18:19 CEST Tobias Imported from Hamamatsu datasheet.