Show Hamamatsu Avalanche Photo Diode 0613005006
This is all the information about APD 0613005006. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0613005006 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F13 |
Break-through voltage: |
457 V |
Voltage for Gain 100 (T=+25°C): |
428.9 V |
Dark current: |
16.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
342 |
Position in Box: |
44 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10518 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 426.9601505 V T = -25 °C: 389.9863021 V |
Voltage for Gain 150: |
T = +20 °C: 434.8483501 V T = -25 °C: 397.8180869 V |
Voltage for Gain 200: |
T = +20 °C: 439.2199003 V T = -25 °C: 402.1679831 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.57160351 V-1 T = -25 °C: 4.609150576 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.108919544 V-1 T = -25 °C: 9.158306517 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.21319187 V-1 T = -25 °C: 14.32210817 V-1 |
Break-through voltage: |
T = +20 °C: 439.9679495 V T = -25 °C: 414.9776182 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history