Show Hamamatsu Avalanche Photo Diode 0612004979
This is all the information about APD 0612004979. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0612004979 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C08 |
Break-through voltage: |
446 V |
Voltage for Gain 100 (T=+25°C): |
417.8 V |
Dark current: |
17.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
253 |
Position in Box: |
50 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10289 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 418.3452413 V T = -25 °C: 381.0070935 V |
Voltage for Gain 150: |
T = +20 °C: 426.2492945 V T = -25 °C: 388.8790538 V |
Voltage for Gain 200: |
T = +20 °C: 430.6189381 V T = -25 °C: 393.2423192 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.436068747 V-1 T = -25 °C: 4.574206188 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.72813347 V-1 T = -25 °C: 9.071578278 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.30629619 V-1 T = -25 °C: 14.13245543 V-1 |
Break-through voltage: |
T = +20 °C: 439.9924999 V T = -25 °C: 407.7888501 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history