Show Hamamatsu Avalanche Photo Diode 3810038797
This is all the information about APD 3810038797. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3810038797 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F02 |
Break-through voltage: |
404 V |
Voltage for Gain 100 (T=+25°C): |
378.8 V |
Dark current: |
11.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
51 |
Position in Box: |
33 |
EP1 batch: |
8 |
EP1 batch after irradiation: |
10092 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
28. Jun 2019 |
Sent for analysis after irradiation: |
08. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 379.0389194 V T = -25 °C: 344.609276 V |
Voltage for Gain 150: |
T = +20 °C: 386.7076142 V T = -25 °C: 351.7747984 V |
Voltage for Gain 200: |
T = +20 °C: 390.9738306 V T = -25 °C: 355.7845399 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.762284264 V-1 T = -25 °C: 4.885726769 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.674270621 V-1 T = -25 °C: 10.21591474 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.28088403 V-1 T = -25 °C: 16.74078648 V-1 |
Break-through voltage: |
T = +20 °C: 405.9184541 V T = -25 °C: 370.530717 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history