Show Hamamatsu Avalanche Photo Diode 3807038719
This is all the information about APD 3807038719. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3807038719 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
E13 |
Break-through voltage: |
404 V |
Voltage for Gain 100 (T=+25°C): |
379.4 V |
Dark current: |
14.5 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
51 |
Position in Box: |
6 |
EP1 batch: |
7 |
EP1 batch after irradiation: |
10091 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
28. Jun 2019 |
Sent for analysis after irradiation: |
08. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 379.4542658 V T = -25 °C: 345.3584239 V |
Voltage for Gain 150: |
T = +20 °C: 387.028053 V T = -25 °C: 352.3354417 V |
Voltage for Gain 200: |
T = +20 °C: 391.2387172 V T = -25 °C: 356.2321901 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.707441074 V-1 T = -25 °C: 5.39382326 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.68932231 V-1 T = -25 °C: 10.09130722 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.6208089 V-1 T = -25 °C: 16.86639486 V-1 |
Break-through voltage: |
T = +20 °C: 406.639608 V T = -25 °C: 370.9384698 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history