Show Hamamatsu Avalanche Photo Diode 3802038594
This is all the information about APD 3802038594. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3802038594 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C02 |
Break-through voltage: |
406 V |
Voltage for Gain 100 (T=+25°C): |
378.1 V |
Dark current: |
23.7 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
50 |
Position in Box: |
23 |
EP1 batch: |
6 |
EP1 batch after irradiation: |
10090 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
28. Jun 2019 |
Sent for analysis after irradiation: |
08. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 377.5278371 V T = -25 °C: 343.6029679 V |
Voltage for Gain 150: |
T = +20 °C: 385.1554439 V T = -25 °C: 350.7073574 V |
Voltage for Gain 200: |
T = +20 °C: 389.4612803 V T = -25 °C: 354.677693 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.565807786 V-1 T = -25 °C: 4.885524642 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.029787653 V-1 T = -25 °C: 10.27502903 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.12647421 V-1 T = -25 °C: 16.93202596 V-1 |
Break-through voltage: |
T = +20 °C: 404.968929 V T = -25 °C: 369.4774262 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history