Show Hamamatsu Avalanche Photo Diode 3715038527
This is all the information about APD 3715038527. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3715038527 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E02 |
Break-through voltage: |
405 V |
Voltage for Gain 100 (T=+25°C): |
376.7 V |
Dark current: |
14.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
50 |
Position in Box: |
1 |
EP1 batch: |
6 |
EP1 batch after irradiation: |
10090 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
28. Jun 2019 |
Sent for analysis after irradiation: |
08. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 376.8273201 V T = -25 °C: 342.6177636 V |
Voltage for Gain 150: |
T = +20 °C: 384.43609 V T = -25 °C: 349.7145346 V |
Voltage for Gain 200: |
T = +20 °C: 388.7011092 V T = -25 °C: 353.697374 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.506062526 V-1 T = -25 °C: 4.918782598 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.952800602 V-1 T = -25 °C: 9.347756207 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.93107891 V-1 T = -25 °C: 17.08816672 V-1 |
Break-through voltage: |
T = +20 °C: 403.8937925 V T = -25 °C: 368.3000464 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history