Show Hamamatsu Avalanche Photo Diode 3713038489
This is all the information about APD 3713038489. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3713038489 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
H05 |
Break-through voltage: |
405 V |
Voltage for Gain 100 (T=+25°C): |
378.3 V |
Dark current: |
15.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
47 |
Position in Box: |
32 |
EP1 batch: |
5 |
EP1 batch after irradiation: |
10086 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
28. Jun 2019 |
Sent for analysis after irradiation: |
08. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 379.8389326 V T = -25 °C: 345.667579 V |
Voltage for Gain 150: |
T = +20 °C: 387.5410158 V T = -25 °C: 352.8343657 V |
Voltage for Gain 200: |
T = +20 °C: 391.8450205 V T = -25 °C: 356.8395912 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.810080118 V-1 T = -25 °C: 4.90336893 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.820000085 V-1 T = -25 °C: 10.22718824 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.35552528 V-1 T = -25 °C: 16.62520331 V-1 |
Break-through voltage: |
T = +20 °C: 407.4168558 V T = -25 °C: 371.814362 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history