Show Hamamatsu Avalanche Photo Diode 3710038425
This is all the information about APD 3710038425. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3710038425 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
H09 |
Break-through voltage: |
404 V |
Voltage for Gain 100 (T=+25°C): |
377 V |
Dark current: |
15.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
48 |
Position in Box: |
50 |
EP1 batch: |
4 |
EP1 batch after irradiation: |
10088 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
28. Jun 2019 |
Sent for analysis after irradiation: |
08. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 376.4439854 V T = -25 °C: 342.4848649 V |
Voltage for Gain 150: |
T = +20 °C: 384.1083212 V T = -25 °C: 349.5983632 V |
Voltage for Gain 200: |
T = +20 °C: 388.4010112 V T = -25 °C: 353.5876272 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.631701617 V-1 T = -25 °C: 4.93262574 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.244853301 V-1 T = -25 °C: 9.446754757 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.41731074 V-1 T = -25 °C: 15.09580943 V-1 |
Break-through voltage: |
T = +20 °C: 403.6585066 V T = -25 °C: 368.2690279 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history