Show Hamamatsu Avalanche Photo Diode 3709038409
This is all the information about APD 3709038409. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3709038409 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G12 |
Break-through voltage: |
406 V |
Voltage for Gain 100 (T=+25°C): |
379.9 V |
Dark current: |
12.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
48 |
Position in Box: |
42 |
EP1 batch: |
4 |
EP1 batch after irradiation: |
10088 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
28. Jun 2019 |
Sent for analysis after irradiation: |
08. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 379.5218036 V T = -25 °C: 345.2493632 V |
Voltage for Gain 150: |
T = +20 °C: 387.2219736 V T = -25 °C: 352.4006016 V |
Voltage for Gain 200: |
T = +20 °C: 391.5265341 V T = -25 °C: 356.4151125 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.550820588 V-1 T = -25 °C: 5.023415469 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.053251728 V-1 T = -25 °C: 9.566303918 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.21012821 V-1 T = -25 °C: 15.33465391 V-1 |
Break-through voltage: |
T = +20 °C: 404.5183174 V T = -25 °C: 370.975367 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history