Show Hamamatsu Avalanche Photo Diode 0808007829
This is all the information about APD 0808007829. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0808007829 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0808007829/2517028832 |
| Unit: |
#3880 (barcode 1309039098) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D05 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.2 V |
| Dark current: |
3.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
295 |
| Position in Box: |
18 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10359 |
| |
|
| Shipment: |
|
| Grid number: |
96 |
| Position in grid: |
13 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
377.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.8559136 V T = -25 °C: 342.5352406 V |
| Voltage for Gain 150: |
T = +20 °C: 385.6798157 V T = -25 °C: 349.798575 V |
| Voltage for Gain 200: |
T = +20 °C: 390.0210689 V T = -25 °C: 353.8716963 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.683424962 V-1 T = -25 °C: 4.844006213 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.315610975 V-1 T = -25 °C: 9.890835501 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.6297802 V-1 T = -25 °C: 15.79375053 V-1 |
| Break-through voltage: |
T = +20 °C: 405.4196144 V T = -25 °C: 369.0049158 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
