Show Hamamatsu Avalanche Photo Diode 3705038320
This is all the information about APD 3705038320. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3705038320 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
A10 |
Break-through voltage: |
408 V |
Voltage for Gain 100 (T=+25°C): |
379.9 V |
Dark current: |
27.6 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
49 |
Position in Box: |
38 |
EP1 batch: |
2 |
EP1 batch after irradiation: |
10089 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
28. Jun 2019 |
Sent for analysis after irradiation: |
08. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 379.8135035 V T = -25 °C: 345.566151 V |
Voltage for Gain 150: |
T = +20 °C: 387.502916 V T = -25 °C: 352.7070556 V |
Voltage for Gain 200: |
T = +20 °C: 391.807918 V T = -25 °C: 356.6987351 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.544499153 V-1 T = -25 °C: 5.04134514 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.077354368 V-1 T = -25 °C: 9.474119326 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.1016534 V-1 T = -25 °C: 15.4091575 V-1 |
Break-through voltage: |
T = +20 °C: 404.9430653 V T = -25 °C: 371.4742489 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history