Show Hamamatsu Avalanche Photo Diode 3704038303
This is all the information about APD 3704038303. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3704038303 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
H06 |
Break-through voltage: |
408 V |
Voltage for Gain 100 (T=+25°C): |
380.5 V |
Dark current: |
22.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
49 |
Position in Box: |
30 |
EP1 batch: |
1 |
EP1 batch after irradiation: |
10089 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
28. Jun 2019 |
Sent for analysis after irradiation: |
08. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 379.4246945 V T = -25 °C: 345.8475562 V |
Voltage for Gain 150: |
T = +20 °C: 387.2621468 V T = -25 °C: 353.0380557 V |
Voltage for Gain 200: |
T = +20 °C: 391.6331496 V T = -25 °C: 357.0501045 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.550191283 V-1 T = -25 °C: 5.070238289 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.058743103 V-1 T = -25 °C: 10.18450213 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.29225183 V-1 T = -25 °C: 16.79553663 V-1 |
Break-through voltage: |
T = +20 °C: 406.9906123 V T = -25 °C: 371.6292977 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history