Show Hamamatsu Avalanche Photo Diode 0808007827
This is all the information about APD 0808007827. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0808007827 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
380.1 V |
| Dark current: |
2.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
362 |
| Position in Box: |
36 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10554 |
| |
|
| Shipment: |
|
| Grid number: |
96 |
| Position in grid: |
9 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
380.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.4049859 V T = -25 °C: 344.4156771 V |
| Voltage for Gain 150: |
T = +20 °C: 387.2574652 V T = -25 °C: 351.7213783 V |
| Voltage for Gain 200: |
T = +20 °C: 391.6192751 V T = -25 °C: 355.8169105 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.493686087 V-1 T = -25 °C: 4.835696924 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.766598409 V-1 T = -25 °C: 9.929730867 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.38277477 V-1 T = -25 °C: 15.8491344 V-1 |
| Break-through voltage: |
T = +20 °C: 407.0874721 V T = -25 °C: 371.1982827 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
