Show Hamamatsu Avalanche Photo Diode 3604037731
This is all the information about APD 3604037731. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3604037731 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
F11 |
Break-through voltage: |
402 V |
Voltage for Gain 100 (T=+25°C): |
376.7 V |
Dark current: |
6.3 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
166 |
Position in Box: |
31 |
EP1 batch: |
200 |
EP1 batch after irradiation: |
10356 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 375.7456386 V T = -25 °C: 341.77447 V |
Voltage for Gain 150: |
T = +20 °C: 383.414168 V T = -25 °C: 348.8716949 V |
Voltage for Gain 200: |
T = +20 °C: 387.6898206 V T = -25 °C: 352.8556069 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.832481922 V-1 T = -25 °C: 5.200363306 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.712006691 V-1 T = -25 °C: 9.913135417 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.28348834 V-1 T = -25 °C: 16.00127018 V-1 |
Break-through voltage: |
T = +20 °C: 401.8805679 V T = -25 °C: 366.8680409 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history