Show Hamamatsu Avalanche Photo Diode 0808007819
This is all the information about APD 0808007819. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0808007819 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F03 |
Break-through voltage: |
408 V |
Voltage for Gain 100 (T=+25°C): |
379.7 V |
Dark current: |
2.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
295 |
Position in Box: |
12 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10359 |
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Shipment: |
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Grid number: |
96 |
Position in grid: |
14 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
17. Aug 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
09. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
379.7 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 379.7394231 V T = -25 °C: 344.4425452 V |
Voltage for Gain 150: |
T = +20 °C: 387.540897 V T = -25 °C: 351.7356719 V |
Voltage for Gain 200: |
T = +20 °C: 391.8610424 V T = -25 °C: 355.8293327 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.694507397 V-1 T = -25 °C: 4.800111716 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.442451821 V-1 T = -25 °C: 9.834422553 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.87049737 V-1 T = -25 °C: 15.72235934 V-1 |
Break-through voltage: |
T = +20 °C: 407.3113 V T = -25 °C: 371.3410859 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history