Show Hamamatsu Avalanche Photo Diode 0808007817
This is all the information about APD 0808007817. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0808007817 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G04 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
381.9 V |
Dark current: |
2.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
362 |
Position in Box: |
34 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10554 |
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Shipment: |
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Grid number: |
96 |
Position in grid: |
10 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
17. Aug 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
09. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
381.9 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 381.5267454 V T = -25 °C: 346.1709188 V |
Voltage for Gain 150: |
T = +20 °C: 389.4004053 V T = -25 °C: 353.5895814 V |
Voltage for Gain 200: |
T = +20 °C: 393.7624083 V T = -25 °C: 357.7534977 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.420186049 V-1 T = -25 °C: 4.859345902 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.631156735 V-1 T = -25 °C: 9.855716329 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.98486503 V-1 T = -25 °C: 15.68473379 V-1 |
Break-through voltage: |
T = +20 °C: 408.8340963 V T = -25 °C: 373.3024489 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history