Show Hamamatsu Avalanche Photo Diode 3517037510
This is all the information about APD 3517037510. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3517037510 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3517037510/2707030525 |
| Unit: |
#2788 (barcode 1309026418) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C02 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
380.3 V |
| Dark current: |
25.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
165 |
| Position in Box: |
41 |
| EP1 batch: |
199 |
| EP1 batch after irradiation: |
10355 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.1167081 V T = -25 °C: 345.7558308 V |
| Voltage for Gain 150: |
T = +20 °C: 387.8497568 V T = -25 °C: 352.9779278 V |
| Voltage for Gain 200: |
T = +20 °C: 392.1918666 V T = -25 °C: 357.0437949 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.663635942 V-1 T = -25 °C: 5.164440865 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.188690236 V-1 T = -25 °C: 9.674593284 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.28089592 V-1 T = -25 °C: 15.39643321 V-1 |
| Break-through voltage: |
T = +20 °C: 404.4396249 V T = -25 °C: 371.82782 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history