Show Hamamatsu Avalanche Photo Diode 3516037449
This is all the information about APD 3516037449. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3516037449 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C07 |
| Break-through voltage: |
402 V |
| Voltage for Gain 100 (T=+25°C): |
374 V |
| Dark current: |
17.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
415 |
| Position in Box: |
18 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10651 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 374.9025795 V T = -25 °C: 340.7762871 V |
| Voltage for Gain 150: |
T = +20 °C: 382.5235208 V T = -25 °C: 347.8674671 V |
| Voltage for Gain 200: |
T = +20 °C: 386.7747732 V T = -25 °C: 351.8550563 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.787413147 V-1 T = -25 °C: 5.360428338 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.596750111 V-1 T = -25 °C: 9.935025521 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.17049311 V-1 T = -25 °C: 15.88804306 V-1 |
| Break-through voltage: |
T = +20 °C: 400.9980058 V T = -25 °C: 365.7497761 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
